May 27, 2011

Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3

Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieveJEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated.

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